DRAM 64k x 1: Difference between revisions
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| 3 *WE | 8 A1 | 12 A4 | 17 *CAS | | | 3 *WE | 8 A1 | 12 A4 | 17 *CAS | | ||
| 4 *RAS | 9 Vdd | 13 A3 | 18 Vss | | | 4 *RAS | 9 Vdd | 13 A3 | 18 Vss | | ||
| 5 NC | 10 A7 | 14 NC | 1 | | 5 NC | 10 A7 | 14 NC | 1 NC | | ||
| 6 A0 | 11 A5 | 15 A6 | 2 Din | | | 6 A0 | 11 A5 | 15 A6 | 2 Din | | ||
| 7 A2 | | 16 Dout | | | | 7 A2 | | 16 Dout | | | ||
Revision as of 21:35, 5 August 2014
Dynamic Random-Access Memory 64K x 1 (DIP16, 300mil)
Size
| bit | Byte | Hex |
|---|---|---|
| 64Kb | 8KB | 10000hex |
Cross-Reference
BRAND TAG NUMBER CODES Micron MI 4264 MT4264 National Semiconductor NMC 3764 NMC3764 NMC4164 NEC uPD 4164 uPD4164C uPD4164D uPD4265C OKI MSM 3764 MSM3764 MSM3764A Samsung KM 4164 KM4164 Texas Instruments TMS 4164 TMS4164 Toshiba TMM 4164 TMM4164AP TMM4164C TMM4164P Note: *64= Page mode *65= Automatic pulse refresh
Pinout
DIP16 (*64 Page mode) DIP16 (*65 Automatic pulse refresh)
+--\/--+ +--\/--+
NC |1 16| GND *RFSH |1 16| GND
Din |2 15| *CAS Din |2 15| *CAS
*WE |3 14| Dout *WE |3 14| Dout
*RAS |4 13| A6 *RAS |4 13| A6
A0 |5 12| A3 A0 |5 12| A3
A2 |6 11| A4 A2 |6 11| A4
A1 |7 10| A5 A1 |7 10| A5
Vcc |8 9| A7 Vcc |8 9| A7
+------+ +------+
LCC18
+---------------------------------------------------------------+
| 3 *WE | 8 A1 | 12 A4 | 17 *CAS |
| 4 *RAS | 9 Vdd | 13 A3 | 18 Vss |
| 5 NC | 10 A7 | 14 NC | 1 NC |
| 6 A0 | 11 A5 | 15 A6 | 2 Din |
| 7 A2 | | 16 Dout | |
+---------------------------------------------------------------+
External links
Files
-
4164 Datasheet
-
4265 Datasheet
