DRAM 256k x 1: Difference between revisions
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=Pinout= | =Pinout= | ||
<pre> | <pre> | ||
DIP16 | |||
+--\/--+ | +--\/--+ | ||
A8 |1 16| Vss | A8 |1 16| Vss | ||
| Line 31: | Line 32: | ||
A1 |7 10| A5 | A1 |7 10| A5 | ||
Vcc |8 9| A7 | Vcc |8 9| A7 | ||
+------+</pre> | +------+ | ||
LCC68 | |||
+---------------------------------------------------------------+ | |||
| 3 *WE | 8 A1 | 12 A4 | 17 *CAS | | |||
| 4 *RAS | 9 Vcc | 13 A3 | 18 Vss | | |||
| 5 NC | 10 A7 | 14 NC | 1 A8 | | |||
| 6 A0 | 11 A5 | 15 A6 | 2 Din | | |||
| 7 A2 | | 16 Dout | | | |||
+---------------------------------------------------------------+ | |||
</pre> | |||
[[Image:dip16-300mil.jpg]] | [[Image:dip16-300mil.jpg]] | ||
Revision as of 19:03, 5 August 2014
Dynamic Random-Access Memory 256K x 1 (DIP16, 300mil)
256Kb, 32KB, 40000hex1 bit
Cross-Reference
Fujitsu MB 81256 Goldstar GM 71C256 Hitachi HM 51256 Hyundai HY 53C256 Micron MI 1256 Mitsubishi M5M 4256 Motorola MCM 6256 NEC uPD 41256 OKI MSM 41256 Paradigm PDM 41256 Samsung KM 41256 Texas Instruments TMS 4256 Toshiba TC 41256
Pinout
DIP16
+--\/--+
A8 |1 16| Vss
Din |2 15| *CAS
*WE |3 14| Dout
*RAS|4 13| A6
A0 |5 12| A3
A2 |6 11| A4
A1 |7 10| A5
Vcc |8 9| A7
+------+
LCC68
+---------------------------------------------------------------+
| 3 *WE | 8 A1 | 12 A4 | 17 *CAS |
| 4 *RAS | 9 Vcc | 13 A3 | 18 Vss |
| 5 NC | 10 A7 | 14 NC | 1 A8 |
| 6 A0 | 11 A5 | 15 A6 | 2 Din |
| 7 A2 | | 16 Dout | |
+---------------------------------------------------------------+
External links
Files
-
81256 Datasheet
-
51256 Datasheet
-
53C256 Datasheet
-
71256 Datasheet
-
4256 Datasheet
-
6256 Datasheet
