DRAM 256k x 1: Difference between revisions

From Citylan
Jump to navigationJump to search
mNo edit summary
Line 24: Line 24:
     +--\/--+
     +--\/--+
  A8 |1  16| Vss
  A8 |1  16| Vss
  D |2  15| *CAS
Din |2  15| *CAS
*WE |3  14| Q
*WE |3  14| Dout
*RAS|4  13| A6
*RAS|4  13| A6
  A0 |5  12| A3
  A0 |5  12| A3

Revision as of 16:22, 5 August 2014

Dynamic Random-Access Memory 256K x 1 (DIP16, 300mil)

256Kb, 32KB, 40000hex1 bit

Cross-Reference

Fujitsu			MB	 81256
Goldstar		GM	71C256
Hitachi			HM	 51256
Hyundai			HY	53C256
Micron			MI	  1256
Mitsubishi		M5M	  4256
Motorola		MCM	  6256
NEC			uPD	 41256
OKI			MSM	 41256
Paradigm		PDM	 41256
Samsung			KM	 41256
Texas Instruments	TMS	  4256
Toshiba			TC	 41256

Pinout

    +--\/--+
 A8 |1   16| Vss
Din |2   15| *CAS
*WE |3   14| Dout
*RAS|4   13| A6
 A0 |5   12| A3
 A2 |6   11| A4
 A1 |7   10| A5
Vcc |8    9| A7
    +------+

File:Dip16-300mil.jpg

External links

DRAM page on wikipedia

Files