DRAM 256k x 1: Difference between revisions
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Vcc |8 9| A7 | Vcc |8 9| A7 | ||
+------+</pre> | +------+</pre> | ||
[[Image:dip16-300mil.jpg]] | |||
=External links= | =External links= | ||
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File:53c256.pdf|53C256 Datasheet | File:53c256.pdf|53C256 Datasheet | ||
</gallery> | </gallery> | ||
[[Category:RAM]] | [[Category:RAM]] | ||
[[Category:DIP16]] | [[Category:DIP16]] | ||
Revision as of 16:06, 5 August 2014
Dynamic Random-Access Memory 256K x 1 (DIP16, 300mil)
256Kb, 32KB, 40000hex1 bit
Cross-Reference
DRAM 256K X 1 (256K) -------------- Fujitsu MB 81256 Goldstar GM 71C256 Hitachi HM 51256 Hyundai HY 53C256 Micron MI 1256 Mitsubishi M5M 4256 Motorola MCM 6256 NEC uPD 41256 OKI MSM 41256 Paradigm PDM 41256 Samsung KM 41256 Texas Instruments TMS 4256 Toshiba TC 41256
Pinout
+--\/--+
A8 |1 16| Vss
D |2 15| *CAS
*WE |3 14| Q
*RAS|4 13| A6
A0 |5 12| A3
A2 |6 11| A4
A1 |7 10| A5
Vcc |8 9| A7
+------+
External links
Files
-
53C256 Datasheet
