DRAM 64k x 4

Cross-Reference

BRAND	TAG	NUMBER	PIN COUNT	OUTPUT	MARKINGS
Fujitsu	MB	81464	DIP18 LCC18 ZIP20	TS	MB81464
Fujitsu	MB	81466	DIP18		MB81466
Hitachi	HM	50464	DIP18		HM50464
Matsushita	MN	41464	DIP18		MN41464
Mitsubishi	M5M	4464	DIP18		M5M4464
NEC	uPD	41464	DIP18		uPD41464
OKI	MSM	41464	DIP18		MSM41464
Samsung	KM	41464	DIP18		KM41C464
Samsung	KM	41466	DIP18		KM41C466
Sharp	LH	2464	DIP18		LH2464
Texas Instruments	TMS	4464	DIP18		TMS4464
Toshiba	TC	51464	DIP18		TC51464
Toshiba	TC	51466	DIP18		TC51466
Zentrum Mikroelektronik	UD	61464	DIP18	TS	UD61464
Note: 464= Page mode 466= Static column mode

Dynamic Random-Access Memory 64K x 4 (DIP18, 300mil)(LCC18, 330mil)(ZIP20, 100mil)

Size

bit	Byte (padded 0000xxxx)	Byte (unpadded)	Hex
256Kb	64KB	32KB	40000hex

Pinout

DIP18
         +---\/---+
     *OE | 1    18| Vss
     DO1 | 2    17| D04
     DO2 | 3    16| *CAS
     *WE | 4    15| DO3
    *RAS | 5    14| A0
      A6 | 6    13| A1
      A5 | 7    12| A2
      A4 | 8    11| A3
     Vcc | 9    10| A7
         +--------+

LCC18
+---------------------------------------------------------------+
|  3 DO2        |  8 A4         | 12 A2         | 17 D04        |
|  4 *WE        |  9 Vcc        | 13 A1         | 18 Vss        |
|  5 *RAS       | 10 A7         | 14 A0         |  1 *OE        |
|  6 A6         | 11 A3         | 15 DO3        |  2 DO1        |
|  7 A5         |               | 16 *CAS       |               |
+---------------------------------------------------------------+


ZIP20
          ^
   DO3  1 |
          |  2 *CAS
   DO4  3 |
          |  4 Vss
   *OE  5 |
          |  6 DO1
   DO2  7 |
          |  8 *WE
  *RAS  9 |
          | 10 NC
    NC 11 |
          | 12 A6
    A5 13 |
          | 14 A4
   Vcc 15 |
          | 16 A7
    A3 17 |
          | 18 A2
    A1 19 |
          | 20 A0
          -

External links

DRAM page on wikipedia

Files

• 

  MB81464 Datasheet

• 

  UD61464 Datasheet