DRAM 1k x 1: Difference between revisions
From Citylan
Jump to navigationJump to search
mNo edit summary |
m (→Files) |
||
| Line 67: | Line 67: | ||
=Files= | =Files= | ||
<gallery widths="150px"> | <gallery widths="150px"> | ||
File: | File:d2105.pdf|D2105 Datasheet | ||
File:mm4261.pdf|MM4261 / MM5261 Datasheet | File:mm4261.pdf|MM4261 / MM5261 Datasheet | ||
File:mm5260.pdf|MM5260 Datasheet | File:mm5260.pdf|MM5260 Datasheet | ||
Revision as of 13:43, 18 January 2017
| BRAND | TAG | NUMBER | PIN COUNT | OUTPUT | MARKINGS |
|---|---|---|---|---|---|
| Intel | I | 1103 | 18 | I1103 I1103A | |
| Intel | I | 2105 | 18 | CS | I2105 |
| National Semiconductors | MM | 4261 | 18 | TS | MM4261 MM5261 |
| National Semiconductors | MM | 5260 | 18 | TS | MM5260 |
| Micronas | ITT | 1103 | 18 | ITT1103 |
Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)
Size
| bit | Byte (padded 0000000x) | Byte (unpadded) | Hex |
|---|---|---|---|
| 1Kb | 1kB | 128B | 400hex |
Pinout
DIP18 (only Intel 2105)
+---\/---+
A3 | 1 18| WE
A2 | 2 17| Vdd (+12V)
A0 | 3 16| CE
A1 | 4 15| A4
REFRESH | 5 14| *DATA OUT
A9 | 6 13| A8
A6 | 7 12| DATA IN
A5 | 8 11| Vss (GND)
A7 | 9 10| Vbb (-5V)
+--------+
DIP18 (all the others)
+---\/---+
A0 | 1 18| A7
A4 | 2 17| A8
R/W | 3 16| A9
A1 | 4 15| *CHIP ENABLE
A2 | 5 14| DATA I/O
A3 | 6 13| PRECHARGE
A5 | 7 12| Vcc
A6 | 8 11| Vdd
NC | 9 10| Vss
+--------+
External links
Files
-
D2105 Datasheet
-
MM4261 / MM5261 Datasheet
-
MM5260 Datasheet
