DRAM 1k x 1: Difference between revisions

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|Intel || I || 1103 || 18 ||  ||  I1103 I1103A
|Intel || I || 1103 || 18 ||  ||  I1103 I1103A
|-
|-
|Intel || I || 2105 || 18 ||CS ||  I2105
|Intel || I || 2105 || 18 || CS ||  I2105
|-
|-
|National Semiconductors || MM || 4261 || 18 ||TS || MM4261 MM5261
|National Semiconductors || MM || 4261 || 18 || TS || MM4261 MM5261
|-
|-
|National Semiconductors || MM || 5260 || 18 ||TS || MM5260
|National Semiconductors || MM || 5260 || 18 || TS || MM5260
|-
|-
|Micronas || ITT || 1103 || 18 ||  || ITT1103
|Micronas || ITT || 1103 || 18 ||  || ITT1103
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=Files=
=Files=
<gallery widths="150px">
<gallery widths="150px">
File:i2105.pdf|I2105 Datasheet
File:i2105.pdf|D2105 Datasheet
File:mm4261.pdf|MM4261 / MM5261 Datasheet
File:mm4261.pdf|MM4261 / MM5261 Datasheet
File:mm5260.pdf|MM5260 Datasheet
File:mm5260.pdf|MM5260 Datasheet

Revision as of 13:42, 18 January 2017

Cross-Reference
BRAND TAG NUMBER PIN COUNT OUTPUT MARKINGS
Intel I 1103 18 I1103 I1103A
Intel I 2105 18 CS I2105
National Semiconductors MM 4261 18 TS MM4261 MM5261
National Semiconductors MM 5260 18 TS MM5260
Micronas ITT 1103 18 ITT1103

Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
1Kb 1kB 128B 400hex

Pinout

DIP18 (only Intel 2105)
         +---\/---+
      A3 | 1    18| WE
      A2 | 2    17| Vdd (+12V)
      A0 | 3    16| CE
      A1 | 4    15| A4
 REFRESH | 5    14| *DATA OUT
      A9 | 6    13| A8
      A6 | 7    12| DATA IN
      A5 | 8    11| Vss (GND)
      A7 | 9    10| Vbb (-5V)
         +--------+


DIP18 (all the others)
         +---\/---+
      A0 | 1    18| A7
      A4 | 2    17| A8
     R/W | 3    16| A9
      A1 | 4    15| *CHIP ENABLE
      A2 | 5    14| DATA I/O
      A3 | 6    13| PRECHARGE
      A5 | 7    12| Vcc
      A6 | 8    11| Vdd
      NC | 9    10| Vss
         +--------+

External links

DRAM page on wikipedia

Files