DRAM 1k x 1: Difference between revisions
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|Intel || I || 1103 || || I1103 I1103A | |Intel || I || 1103 || || I1103 I1103A | ||
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|Intel || I || 2105 || CS || I2105 | |||
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|National Semiconductors || MM || 4261 || TS || MM4261 MM5261 | |National Semiconductors || MM || 4261 || TS || MM4261 MM5261 | ||
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=Files= | =Files= | ||
<gallery widths="150px"> | <gallery widths="150px"> | ||
File:i2105.pdf|I2105 Datasheet | |||
File:mm4261.pdf|MM4261 / MM5261 Datasheet | File:mm4261.pdf|MM4261 / MM5261 Datasheet | ||
File:mm5260.pdf|MM5260 Datasheet | File:mm5260.pdf|MM5260 Datasheet |
Revision as of 14:46, 16 January 2017
BRAND | TAG | NUMBER | OUTPUT | MARKINGS |
---|---|---|---|---|
Intel | I | 1103 | I1103 I1103A | |
Intel | I | 2105 | CS | I2105 |
National Semiconductors | MM | 4261 | TS | MM4261 MM5261 |
National Semiconductors | MM | 5260 | TS | MM5260 |
Micronas | ITT | 1103 | ITT1103 |
Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)
Size
bit | Byte (padded 0000000x) | Byte (unpadded) | Hex |
---|---|---|---|
1Kb | 1kB | 128B | 400hex |
Pinout
DIP18 (only Intel 2105) +---\/---+ A3 | 1 18| WE A2 | 2 17| Vdd (+12V) A0 | 3 16| CE A1 | 4 15| A4 REFRESH | 5 14| *DATA OUT A9 | 6 13| A8 A6 | 7 12| DATA IN A5 | 8 11| Vss (GND) A7 | 9 10| Vbb (-5V) +--------+ DIP18 (all the others) +---\/---+ A0 | 1 18| A7 A4 | 2 17| A8 R/W | 3 16| A9 A1 | 4 15| *CHIP ENABLE A2 | 5 14| DATA I/O A3 | 6 13| PRECHARGE A5 | 7 12| Vcc A6 | 8 11| Vdd NC | 9 10| Vss +--------+
External links
Files
-
I2105 Datasheet
-
MM4261 / MM5261 Datasheet
-
MM5260 Datasheet