DRAM 1k x 1: Difference between revisions
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=Pinout= | =Pinout= | ||
<pre> | <pre> | ||
DIP18 | DIP18 (only Intel 2105) | ||
+---\/---+ | |||
A3 | 1 18| WE | |||
A2 | 2 17| Vdd (+12V) | |||
A0 | 3 16| CE | |||
A1 | 4 15| A4 | |||
REFRESH | 5 14| *DATA OUT | |||
A9 | 6 13| A8 | |||
A6 | 7 12| DATA IN | |||
A5 | 8 11| Vss (GND) | |||
A7 | 9 10| Vbb (-5V) | |||
+--------+ | |||
DIP18 (all the others) | |||
+---\/---+ | +---\/---+ | ||
A0 | 1 18| A7 | A0 | 1 18| A7 |
Revision as of 14:37, 16 January 2017
BRAND | TAG | NUMBER | OUTPUT | MARKINGS |
---|---|---|---|---|
Intel | I | 1103 | I1103 I1103A | |
National Semiconductors | MM | 4261 | TS | MM4261 MM5261 |
National Semiconductors | MM | 5260 | TS | MM5260 |
Micronas | ITT | 1103 | ITT1103 |
Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)
Size
bit | Byte (padded 0000000x) | Byte (unpadded) | Hex |
---|---|---|---|
1Kb | 1kB | 128B | 400hex |
Pinout
DIP18 (only Intel 2105) +---\/---+ A3 | 1 18| WE A2 | 2 17| Vdd (+12V) A0 | 3 16| CE A1 | 4 15| A4 REFRESH | 5 14| *DATA OUT A9 | 6 13| A8 A6 | 7 12| DATA IN A5 | 8 11| Vss (GND) A7 | 9 10| Vbb (-5V) +--------+ DIP18 (all the others) +---\/---+ A0 | 1 18| A7 A4 | 2 17| A8 R/W | 3 16| A9 A1 | 4 15| *CHIP ENABLE A2 | 5 14| DATA I/O A3 | 6 13| PRECHARGE A5 | 7 12| Vcc A6 | 8 11| Vdd NC | 9 10| Vss +--------+
External links
Files
-
MM4261 / MM5261 Datasheet
-
MM5260 Datasheet