DRAM 1k x 1: Difference between revisions

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Line 9: Line 9:
|National Semiconductors || MM || 4261 || TS || MM4261 MM5261
|National Semiconductors || MM || 4261 || TS || MM4261 MM5261
|-
|-
|National Semiconductors || MM || 5260 || || MM5260
|National Semiconductors || MM || 5260 || TS || MM5260
|-
|-
| || ITT || 1103 ||  || ITT1103
|Micronas || ITT || 1103 ||  || ITT1103
|}
|}



Revision as of 12:38, 16 January 2017

Cross-Reference
BRAND TAG NUMBER OUTPUT MARKINGS
National Semiconductors MM 4261 TS MM4261 MM5261
National Semiconductors MM 5260 TS MM5260
Micronas ITT 1103 ITT1103

Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
1Kb 1kB 128B 400hex

Pinout

DIP18
         +---\/---+
      A0 | 1    18| A7
      A4 | 2    17| A8
     R/W | 3    16| A9
      A1 | 4    15| *CHIP ENABLE
      A2 | 5    14| DATA I/O
      A3 | 6    13| PRECHARGE
      A5 | 7    12| Vcc
      A6 | 8    11| Vdd
      NC | 9    10| Vss
         +--------+

External links

DRAM page on wikipedia

Files