DRAM 16k x 1: Difference between revisions

From Citylan
Jump to navigationJump to search
mNo edit summary
mNo edit summary
Line 18: Line 18:
| Texas Instruments || TMS || 4116 || TMS4116
| Texas Instruments || TMS || 4116 || TMS4116
|-
|-
| Toshiba || TMM || 4116 || TMM4116P
| Toshiba || TMM || 416 4116 || TMM416C TMM416D TMM4116P
|-
| Toshiba || TMM || 416  || TMM416C TMM416D
|}
|}



Revision as of 17:23, 15 January 2017

Cross-Reference
BRAND TAG NUMBER MARKINGS
Eurotechnique ET 4116 ET4116N
Mostek MK 4116 MK4116P MK4116N
Motorola MCM 4116 MCM4116 MCM4116B MCM4116BP
National Semiconductor MM 5290 MM5290 MM5290J
NEC uPD 416 uPD416C
Texas Instruments TMS 4116 TMS4116
Toshiba TMM 416 4116 TMM416C TMM416D TMM4116P

Dynamic Random-Access Memory 16K x 1 (DIP16, 300mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
16Kb 16KB 2KB 4000hex

Pinout

DIP16
         +---\/---+
     Vbb | 1    16| Vss
     Din | 2    15| *CAS
  *WRITE | 3    14| Dout
    *RAS | 4    13| A6
      A0 | 5    12| A3
      A2 | 6    11| A4
      A1 | 7    10| A5
     Vdd | 8     9| Vcc
         +--------+

External links

DRAM page on wikipedia

Files