DRAM 64k x 1: Difference between revisions

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Line 20: Line 20:
|Toshiba || TMM || 4164 || TMM4164AP TMM4164C TMM4164P
|Toshiba || TMM || 4164 || TMM4164AP TMM4164C TMM4164P
|  ||  ||  ||  
|  ||  ||  ||  
Note:
|Note:
*64= Page mode
*64= Page mode
*65= Automatic pulse refresh
*65= Automatic pulse refresh

Revision as of 10:02, 8 January 2017

Cross-Reference
BRAND TAG NUMBER MARKINGS
Micron MI 4264 MT4264
National Semiconductor NMC 3764 NMC3764 NMC4164
NEC uPD 4164 uPD4164C uPD4164D uPD4265C
OKI MSM 3764 MSM3764 MSM3764A
Samsung KM 4164 KM4164
Texas Instruments TMS 4164 TMS4164
Toshiba TMM 4164 TMM4164AP TMM4164C TMM4164P Note:
  • 64= Page mode
  • 65= Automatic pulse refresh

Dynamic Random-Access Memory 64K x 1 (DIP16, 300mil)(LCC18, 330mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
64Kb 64KB 8KB 10000hex

Pinout

DIP16 (*64 Page mode)				DIP16 (*65 Automatic pulse refresh)
     +--\/--+					      +--\/--+
  NC |1   16| GND				*RFSH |1   16| GND
 Din |2   15| *CAS				  Din |2   15| *CAS
 *WE |3   14| Dout				  *WE |3   14| Dout
*RAS |4   13| A6				 *RAS |4   13| A6
  A0 |5   12| A3				   A0 |5   12| A3
  A2 |6   11| A4				   A2 |6   11| A4
  A1 |7   10| A5				   A1 |7   10| A5
 Vcc |8    9| A7				  Vcc |8    9| A7
     +------+					      +------+

LCC18
+---------------------------------------------------------------+
|  3 *WE        |  8 A1         | 12 A4         | 17 *CAS       |
|  4 *RAS       |  9 Vdd        | 13 A3         | 18 Vss        |
|  5 NC         | 10 A7         | 14 NC         |  1 NC         |
|  6 A0         | 11 A5         | 15 A6         |  2 Din        |
|  7 A2         |               | 16 Dout       |               |
+---------------------------------------------------------------+

External links

DRAM page on wikipedia

Files