DRAM 16k x 1: Difference between revisions

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| Toshiba || TMM || 4116 || TMM4116P
| Toshiba || TMM || 4116 || TMM4116P
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| Toshiba || TMM || 416  || TMM416C TMM416D
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Revision as of 14:38, 15 January 2017

Cross-Reference
BRAND TAG NUMBER MARKINGS
Eurotechnique ET 4116 ET4116N
Mostek MK 4116 MK4116P MK4116N
Motorola MCM 4116 MCM4116 MCM4116B MCM4116BP
National Semiconductor MM 5290 MM5290 MM5290J
NEC uPD 416 uPD416C
Texas Instruments TMS 4116 TMS4116
Toshiba TMM 4116 TMM4116P
Toshiba TMM 416 TMM416C TMM416D

Dynamic Random-Access Memory 16K x 1 (DIP16, 300mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
16Kb 16KB 2KB 4000hex

Pinout

DIP16
         +---\/---+
     Vbb | 1    16| Vss
     Din | 2    15| *CAS
  *WRITE | 3    14| Dout
    *RAS | 4    13| A6
      A0 | 5    12| A3
      A2 | 6    11| A4
      A1 | 7    10| A5
     Vdd | 8     9| Vcc
         +--------+

External links

DRAM page on wikipedia

Files