DRAM 256k x 1: Difference between revisions

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[[Category:RAM]]
[[Category:RAM]]
[[Category:DIP16]]
[[Category:DIP16]]
[[Category:LCC18]]
[[Category:ZIP16]]

Revision as of 19:21, 5 August 2014

Dynamic Random-Access Memory 256K x 1 (DIP16, 300mil)(LCC18, 330mil)

256Kb, 32KB, 40000hex1 bit

Cross-Reference

Fujitsu			MB	 81256
Goldstar		GM	71C256
Hitachi			HM	 51256
Hyundai			HY	53C256
Micron			MI	  1256
Mitsubishi		M5M	  4256
Motorola		MCM	  6256
NEC			uPD	 41256
OKI			MSM	 41256
Paradigm		PDM	 41256
Samsung			KM	 41256
Texas Instruments	TMS	  4256
Toshiba			TC	 41256

Pinout

DIP16
    +--\/--+
 A8 |1   16| Vss
Din |2   15| *CAS
*WE |3   14| Dout
*RAS|4   13| A6
 A0 |5   12| A3
 A2 |6   11| A4
 A1 |7   10| A5
Vcc |8    9| A7
    +------+

LCC18
+---------------------------------------------------------------+
|  3 *WE        |  8 A1         | 12 A4         | 17 *CAS       |
|  4 *RAS       |  9 Vcc        | 13 A3         | 18 Vss        |
|  5 NC         | 10 A7         | 14 NC         |  1 A8         |
|  6 A0         | 11 A5         | 15 A6         |  2 Din        |
|  7 A2         |               | 16 Dout       |               |
+---------------------------------------------------------------+

ZIP16
          ^
          |  1 A6
  Dout  2 |
          |  3 *CAS
   Vss  4 |
          |  5 A8
   Din  6 |
          |  7 *we
  *RAS  8 |
          |  9 A0
    A2 10 |
          | 11 A1
   Vcc 12 |
          | 13 A7
    A6 14 |
          | 15 A4
    A3 16 |
          -

File:Dip16-300mil.jpg

External links

DRAM page on wikipedia

Files

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