DRAM 64k x 1: Difference between revisions
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[[Category:RAM]] | [[Category:RAM]] | ||
[[Category:DIP16]] | [[Category:DIP16-300mil]] | ||
[[Category:LCC18]] | [[Category:LCC18]] |
Revision as of 20:27, 5 May 2017
BRAND | TAG | NUMBER | PIN COUNT | OUTPUT | MARKINGS |
---|---|---|---|---|---|
Micron | MI | 4264 | MT4264 | ||
National Semiconductor | NMC | 3764 | NMC3764 | ||
National Semiconductor | NMC | 4164 | NMC4164 | ||
NEC | uPD | 4164 | uPD4164C uPD4164D | ||
NEC | uPD | 4265 | DIP16 | TS | uPD4265C |
OKI | MSM | 3764 | MSM3764 MSM3764A | ||
Samsung | KM | 4164 | KM4164 | ||
Texas Instruments | TMS | 4164 | DIP16 LCC18 | TS | TMS4164 |
Toshiba | TMM | 4164 | TMM4164AP TMM4164C TMM4164P | ||
Note:
|
Dynamic Random-Access Memory 64K x 1 (DIP16, 300mil)(LCC18, 330mil)
Size
bit | Byte (padded 0000000x) | Byte (unpadded) | Hex |
---|---|---|---|
64Kb | 64KB | 8KB | 10000hex |
Pinout
DIP16 (*64 Page mode) DIP16 (*65 Automatic pulse refresh) +--\/--+ +--\/--+ NC |1 16| GND *RFSH |1 16| GND Din |2 15| *CAS Din |2 15| *CAS *WE |3 14| Dout *WE |3 14| Dout *RAS |4 13| A6 *RAS |4 13| A6 A0 |5 12| A3 A0 |5 12| A3 A2 |6 11| A4 A2 |6 11| A4 A1 |7 10| A5 A1 |7 10| A5 Vcc |8 9| A7 Vcc |8 9| A7 +------+ +------+ LCC18 +---------------------------------------------------------------+ | 3 *WE | 8 A1 | 12 A4 | 17 *CAS | | 4 *RAS | 9 Vdd | 13 A3 | 18 Vss | | 5 NC | 10 A7 | 14 NC | 1 NC | | 6 A0 | 11 A5 | 15 A6 | 2 Din | | 7 A2 | | 16 Dout | | +---------------------------------------------------------------+
External links
Files
-
TMS4164 Datasheet
-
uPD4265 Datasheet