DRAM 1k x 1: Difference between revisions

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!MARKINGS
!MARKINGS
|-
|-
|Intel || I || 1103 || 18 ||  ||  I1103 I1103A
|Intel || D/P || 1103 || 18 ||  ||  D1103 D1103A
|-
|-
|Intel || I || 2105 || 18 || CS ||  I2105
|Intel || D/P || 2105 || 18 || CS ||  D2105
|-
|-
|National Semiconductors || MM || 4261 || 18 || TS || MM4261
|National Semiconductors || MM || 4261 || 18 || TS || MM4261

Revision as of 13:45, 18 January 2017

Cross-Reference
BRAND TAG NUMBER PIN COUNT OUTPUT MARKINGS
Intel D/P 1103 18 D1103 D1103A
Intel D/P 2105 18 CS D2105
National Semiconductors MM 4261 18 TS MM4261
National Semiconductors MM 5260 18 TS MM5260
National Semiconductors MM 5261 18 TS MM5261
Micronas ITT 1103 18 ITT1103

Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
1Kb 1kB 128B 400hex

Pinout

DIP18 (only Intel 2105)
         +---\/---+
      A3 | 1    18| WE
      A2 | 2    17| Vdd (+12V)
      A0 | 3    16| CE
      A1 | 4    15| A4
 REFRESH | 5    14| *DATA OUT
      A9 | 6    13| A8
      A6 | 7    12| DATA IN
      A5 | 8    11| Vss (GND)
      A7 | 9    10| Vbb (-5V)
         +--------+


DIP18 (all the others)
         +---\/---+
      A0 | 1    18| A7
      A4 | 2    17| A8
     R/W | 3    16| A9
      A1 | 4    15| *CHIP ENABLE
      A2 | 5    14| DATA I/O
      A3 | 6    13| PRECHARGE
      A5 | 7    12| Vcc
      A6 | 8    11| Vdd
      NC | 9    10| Vss
         +--------+

External links

DRAM page on wikipedia

Files