DRAM 16k x 4: Difference between revisions

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(Created page with "{| style="float: right;" border="1" cellpadding="4" cellspacing="0" class="sortable" |+ style="background:silver" | Cross-Reference !BRAND !TAG !NUMBER !PIN COUNT !OUTPUT !MAR...")
 
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|-
|Fujitsu || MB || 81416 || DIP18-300mil LCC18 || TS || MB81416
|Fujitsu || MB || 81416 || DIP18-300mil LCC18 || TS || MB81416
|-
|Texas Instruments || TMS || 4416 || DIP18-300mil LCC18 || TS || TMS4416 SMJ4416
|}
|}


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<gallery widths="150px">
<gallery widths="150px">
File:mb81416.pdf|MB81416 Datasheet
File:mb81416.pdf|MB81416 Datasheet
File:tms4416.pdf|TMS4416 SMJ4416 Datasheet
</gallery>
</gallery>



Latest revision as of 15:17, 28 February 2017

Cross-Reference
BRAND TAG NUMBER PIN COUNT OUTPUT MARKINGS
Fujitsu MB 81416 DIP18-300mil LCC18 TS MB81416
Texas Instruments TMS 4416 DIP18-300mil LCC18 TS TMS4416 SMJ4416

Dynamic Random-Access Memory 16K x 4

Size

bit Byte (padded 0000xxxx) Byte (unpadded) Hex
64Kb 16KB 8KB 10000hex

Pinout

DIP18
         +---\/---+
     *OE | 1    18| Vss
     DQ1 | 2    17| DQ4
     DQ2 | 3    16| *CAS
     *WE | 4    15| DQ3
    *RAS | 5    14| A0
      A6 | 6    13| A1
      A5 | 7    12| A2
      A4 | 8    11| A3
     Vcc | 9    10| A7
         +--------+

LCC18
+-----------------------------------------+
|  3 DQ2   |         | 12 A2    |         |
|  4 *WE   |  8 A4   | 13 A1    | 17 DQ4  |
|  5 *RAS  |  9 Vcc  | 14 A0    | 18 Vss  |
|  6 A6    | 10 A7   | 15 DQ3   |  1 *OE  |
|  7 A5    | 11 A3   | 16 *CAS  |  2 DQ1  |
+-----------------------------------------+

External links

DRAM page on wikipedia

Files