DRAM 1k x 1: Difference between revisions

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(Created page with "{| style="float: right;" border="1" cellpadding="4" cellspacing="0" |+ style="background:silver" | Cross-Reference !BRAND !TAG !NUMBER !MARKINGS |- |Fujitsu || MB || 81256 || ...")
 
 
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{| style="float: right;" border="1" cellpadding="4" cellspacing="0"
{| style="float: right;" border="1" cellpadding="4" cellspacing="0" class="sortable"
|+ style="background:silver" | Cross-Reference
|+ style="background:silver" | Cross-Reference
!BRAND
!BRAND
!TAG
!TAG
!NUMBER
!NUMBER
!PIN COUNT
!OUTPUT
!MARKINGS
!MARKINGS
|-
|-
|Fujitsu || MB || 81256 || MB81256 MB81257 MB81258
|Intel || D/P || 1103 || 18 ||  ||  D1103 D1103A
|-
|-
|  || ||  ||  
|Intel || D/P || 2105 || 18 || CS ||  D2105
|-
|National Semiconductors || MM || 4261 || 18 || TS || MM4261
|-
|National Semiconductors || MM || 5260 || 18 || TS || MM5260
|-
|National Semiconductors || MM || 5261 || 18 || TS || MM5261
|-
|Micronas || ITT || 1103 || 18 ||  || ITT1103
|}
|}


'''Dynamic Random-Access Memory 1K x 1 (DIP16, 300mil'''
'''Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)'''


=Size=
=Size=
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|-align="left"  
|-align="left"  
!bit
!bit
!Byte (padded 0xxxxxxx)
!Byte (padded 0000000x)
!Byte (unpadded)
!Byte (unpadded)
!Hex
!Hex
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=Pinout=
=Pinout=
<pre>
<pre>
DIP16
DIP18 (only Intel 2105)
        +---\/---+
      A3 | 1    18| WE
      A2 | 2    17| Vdd (+12V)
      A0 | 3    16| CE
      A1 | 4    15| A4
REFRESH | 5    14| *DATA OUT
      A9 | 6    13| A8
      A6 | 7    12| DATA IN
      A5 | 8    11| Vss (GND)
      A7 | 9    10| Vbb (-5V)
        +--------+
 
 
DIP18 (all the others)
         +---\/---+
         +---\/---+
        | 1    16|  
      A0 | 1    18| A7
        | 2    15|  
      A4 | 2    17| A8
        | 3    14|  
    R/W | 3    16| A9
        | 4    13|  
      A1 | 4    15| *CHIP ENABLE
        | 5    12|  
      A2 | 5    14| DATA I/O
        | 6    11|  
      A3 | 6    13| PRECHARGE
        | 7    10|  
      A5 | 7    12| Vcc
        | 8     9|  
      A6 | 8   11| Vdd
      NC | 9   10| Vss
         +--------+
         +--------+
</pre>
</pre>
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=Files=
=Files=
<gallery widths="150px">
<gallery widths="150px">
File:mm5263.pdf|mm5263 Datasheet
File:d2105.pdf|D2105 Datasheet
File:mm4261.pdf|MM4261 / MM5261 Datasheet
File:mm5260.pdf|MM5260 Datasheet
</gallery>
</gallery>


[[Category:RAM]]
[[Category:RAM]]
[[Category:DIP16]]
[[Category:DIP18-300mil]]

Latest revision as of 14:39, 9 November 2017

Cross-Reference
BRAND TAG NUMBER PIN COUNT OUTPUT MARKINGS
Intel D/P 1103 18 D1103 D1103A
Intel D/P 2105 18 CS D2105
National Semiconductors MM 4261 18 TS MM4261
National Semiconductors MM 5260 18 TS MM5260
National Semiconductors MM 5261 18 TS MM5261
Micronas ITT 1103 18 ITT1103

Dynamic Random-Access Memory 1K x 1 (DIP18, 300mil)

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
1Kb 1kB 128B 400hex

Pinout

DIP18 (only Intel 2105)
         +---\/---+
      A3 | 1    18| WE
      A2 | 2    17| Vdd (+12V)
      A0 | 3    16| CE
      A1 | 4    15| A4
 REFRESH | 5    14| *DATA OUT
      A9 | 6    13| A8
      A6 | 7    12| DATA IN
      A5 | 8    11| Vss (GND)
      A7 | 9    10| Vbb (-5V)
         +--------+


DIP18 (all the others)
         +---\/---+
      A0 | 1    18| A7
      A4 | 2    17| A8
     R/W | 3    16| A9
      A1 | 4    15| *CHIP ENABLE
      A2 | 5    14| DATA I/O
      A3 | 6    13| PRECHARGE
      A5 | 7    12| Vcc
      A6 | 8    11| Vdd
      NC | 9    10| Vss
         +--------+

External links

DRAM page on wikipedia

Files

  • D2105 Datasheet

    D2105 Datasheet

  • MM4261 / MM5261 Datasheet

    MM4261 / MM5261 Datasheet

  • MM5260 Datasheet

    MM5260 Datasheet

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